apt2x101dq60j 600v 100a APT2X100DQ60J 600v 100a 053-4208 rev g 9-2009 anti-parallel parallel 2 1 3 23 4 14 APT2X100DQ60J apt2x101dq60j product benefits ? low losses ? low noise switching ? cooler operation ? higher reliability systems ? increased system power density product features ? ultrafast recovery times ? soft recovery characteristics ? popular sot-227 package ? low forward voltage ? high blocking voltage ? low leakage current ? avalanche energy rated product applications ? anti-parallel diode -switchmode power supply -inverters ? free wheeling diode -motor controllers -converters ? snubber diode ? uninterruptible power supply (ups) ? induction heating ? high speed recti? ers ultrafast soft recovery rectifier diode static electrical characteristics symbol v f i rm c t unit volts a pf min typ max 1.6 2.2 2.05 1.28 25 500 190 characteristic / test conditions forward voltage maximum reverse leakage current junction capacitance, v r = 200v i f = 100a i f = 200a i f = 100a, t j = 125c v r = 600v v r = 600v, t j = 125c dual die isotop ? package maximum ratings all ratings: t c = 25c unless otherwise speci? ed. characteristic / test conditions maximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse voltage maximum average forward current (t c = 82c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) avalanche energy (1a, 40mh) operating and storagetemperature range symbol v r v rrm v rwm i f(av) i f(rms) i fsm e avl t j ,t stg unit volts amps mj c apt2x101_100dq60j 600 100 146 1000 20 -55 to 175 s o t -2 2 7 isotop ? 1 2 3 4 file # e145592 "ul recognized" microsemi website - http://www.microsemi.com
apt2x101_100dq60j dynamic characteristics 053-4208 rev g 9-2009 min typ max - 34 - 160 - 290 - 5 - - 220 - 1530 - 13 - - 100 - 2890 - 44 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 100a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 100a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 100a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c thermal and mechanical characteristics characteristic / test conditions junction-to-case thermal resistance rms voltage (50-60hhz sinusoidal wavefomr ffrom terminals to mounting base for 1 min.) package weight maximum mounting torque symbol r jc v isolation w t torque min typ max .42 2500 1.03 29.2 10 1.1 unit c/w volts oz g lb?in n?m microsemi reserves the right to change, without notice, the speci? cations and information contained herein. 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 10 -5 10 -4 10 -3 10 -2 0.1 1 z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 1. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note:
053-4208 rev g 9-2009 apt2x101_100dq60j typical performance curves 0 0.2 0.4 0.5 0.6 1 1.2 1.4 0 25 50 75 100 125 150 t j =125 c v r =400v 50a 100a 200a duty cycle = 0.5 t j =175 c 1 10 100 200 t j , junction temperature ( c) case temperature ( c) figure 6. dynamic parameters vs. junction temperature figure 7. maximum average forward current vs. casetempera ture v r , reverse voltage (v) figure 8. junction capacitance vs. reverse voltage q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 2. forward current vs. forward voltage figure 3. reverse recovery time vs. current rate of chan ge -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 4. reverse recovery charge vs. current rate of change figure 5. reverse recovery current vs. current rate of cha nge 0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 t j = -55 c t j = 25 c t j = 125 c t j = 175 c t j =125 c v r =400v 100a 50a 200a 300 250 200 150 100 50 0 4000 3500 3000 2500 2000 1500 1000 500 0 t j =125 c v r =400v 200a 100a 50a 300 250 200 150 100 50 0 60 50 40 30 20 10 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) q rr t rr q rr i rrm 1400 1200 1000 800 600 400 200 0 t rr 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 175
apt2x101_100dq60j 053-4208 rev g 9-2009 apt60m75l2ll 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 9. diode test circuit figure 10, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform anode 1 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 h100 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) anode 2 anti-parallel parallel cathode 1 r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) cathode 2 anode 1 cathode 2 anode 2 cathode 1 sot-227 (isotop ? ) package outline APT2X100DQ60J apt2x101dq60j microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved.
|
